Characterization of semiconducting polymers for thin film transistors

被引:14
作者
Chabinyc, Michael L. [1 ]
机构
[1] Palo Alto Res Ctr, Palo Alto, CA 94304 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 02期
关键词
D O I
10.1116/1.2889407
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A review of characterization methods used to study semiconducting polymers in thin film transistors is presented. The basic operation of polymeric thin film transistors (TFTs) is described. Methods for microstructural characterization of thin films of semiconducting polymers such as x-ray scattering are discussed. Examples of how these methods have been applied to study structural ordering in semicrystalline polymers such as poly(3-hexylthiophene) are presented. The electronic structure of these materials is important for understanding the operation of TFTs and has been studied using ultraviolet photoelectronic spectroscopy, optical spectroscopy, and electrochemical methods. Instabilities of the operation of TFTs have been examined using time-dependent current-voltage measurements, charge modulated spectroscopies, and scanning probe methods. These methods have revealed the nature of charge carriers and trap states in semiconducting polymers. (C) 2008 American Vacuum Society.
引用
收藏
页码:445 / 457
页数:13
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