Exciton relaxation in Ga1-xInxAs/GaAs self-organized quantum dots

被引：3

作者：

Shen, JX

Oka, Y

Cheng, HH

Tsai, FY

Lee, CP

机构：

[1] Tohoku Univ, RISM, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Corp, CREST, Kawaguchi 3320012, Japan

[3] Taiwan Univ, Ctr Condensed Matter Sci, Sect 4, Taipei, Taiwan

[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[5] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1999年 / 25卷 / 1-2期

基金：

日本学术振兴会;

关键词：

transient photoluminescence; self organized quantum dots; hot excitation relaxation;

D O I：

10.1006/spmi.1998.0625

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The exciton dynamics in Ga1-xInxAs/GaAs self-organized quantum dots grown on GaAs (1 1 1)B substrates are studied by the time-resolved photoluminescence (PL). We have found the intra-dot exciton relaxation by the reduction of the linewidth and peak energy and also by the energy-dependent PL rise time in the transient PL spectra. Compared with the energy relaxation in the reference quantum wells, we have confirmed that the exciton relaxation in three-dimensionally confined quantum dots is slower than in the quantum wells, (C) 1999 Academic Press.

引用

页码：131 / 136

页数：6

共 5 条

[1] Hot exciton relaxation in CdZnSe/ZnSe quantum wells and quantum dots [J].