Comment on "Atomic transport and chemical stability during annealing of ultrathin Al2O3 films on Si" -: Reply

被引：13

作者：

Krug, C

da Rosa, EBO

de Almeida, RMC

Morais, J

Baumvol, IJR

Salgado, TDM

Stedile, FC

机构：

[1] Univ Fed Rio Grande do Sul, Inst Fis, BR-91509900 Porto Alegre, RS, Brazil

[2] Univ Fed Rio Grande do Sul, Inst Quim, BR-91509900 Porto Alegre, RS, Brazil

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.86.4714

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：4714 / 4714

页数：1

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[1] Atomic transport during growth of ultrathin dielectrics on silicon
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[J]. SURFACE SCIENCE REPORTS, 1999, 36 (1-8) : 1 - 166
[2] Comment on "Atomic transport and chemical stability during annealing of ultrathin Al2O3 films on Si"
Copel, M
[J]. PHYSICAL REVIEW LETTERS, 2001, 86 (20) : 4713 - 4713
[3] Alternative dielectrics to silicon dioxide for memory and logic devices
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Maria, JP
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[J]. NATURE, 2000, 406 (6799) : 1032 - 1038
[4] Atomic transport and chemical stability during annealing of ultrathin Al2O3 films on Si
Krug, C
da Rosa, EBO
de Almeida, RMC
Morais, J
Baumvol, IJR
Salgado, TDM
Stedile, FC
[J]. PHYSICAL REVIEW LETTERS, 2000, 85 (19) : 4120 - 4123
[5] Characterization of Gd2O3 films deposited on Si(100) by electron-beam evaporation
Landheer, D
Gupta, JA
Sproule, GI
McCaffrey, JP
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (02) : G29 - G35