Growth of highly aluminum-doped p-type 6H-SiC single crystals by the modified Lely method

被引：22

作者：

Schulze, N ^{[1
]}

Gajowski, J ^{[1
]}

Semmelroth, K ^{[1
]}

Laube, M ^{[1
]}

Pensl, G ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Appl Phys, DE-91058 Erlangen, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

acceptor; aluminum; C-V characteristics; Hall effect; Hall scattering factor; p-type; 6H-SiC; SIMS; sublimation growth;

D O I：

10.4028/www.scientific.net/MSF.353-356.45

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

Aluminum- (Al-) doped 6H-SiC crystals have been grown by the modified Lely method. Al(4)C(3) is used as Al source during the growth and was put into a separate container which was kept at temperatures about 250 K lower than the SiC source material. Highly aluminum doped F-type 6H-SiC crystals (AI-concentration ca. 1(.)10(19)cm(-3)) could be grown showing no microscopic aluminum-containing precipitates. The resistivity (at room temperature) is 1.4 Omega cm measured on a wafer, which is prepared from a region close to the seed crystal. The Hall scattering factor for holes r(H(p)) at temperatures T > 250 K is estimated to be smaller than one; its value at 700 K is determined to be about 0.5.

引用

页码：45 / 48

页数：4

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