Oscillations of sputtering yield

被引：31

作者：

Eckstein, W ^{[1
]}

机构：

[1] Max Planck Inst Plasma Phys, D-85748 Garching, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 171卷 / 04期

关键词：

D O I：

10.1016/S0168-583X(00)00321-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Implantation of heavy ions into light target material (low atomic number) leads to oscillations in partial sputtering yields as a function of the incident fluence as observed by calculations with the Monte Carlo program TRIDYN. These oscillations occur in the energy range of 1 keV-1 MeV. They are also found in the retained amount of implanted species. The oscillations can be explained by the fluence-dependent depth profiles of the implanted species. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：435 / 442

页数：8