Culn1-xGaxSe2 thin films prepared by one step electrodeposition

被引:8
作者
Bouabid, K
Ihlal, A
Manar, A
Outzourhit, A
Ameziane, EL
机构
[1] Fac Sci, Dept Phys, Equipe Phys Semicond, Agadir, Morocco
[2] Fac Sci Semlalia, Dept Phys, Lab Phys Solides & Couches Minces, Marrakech, Morocco
来源
JOURNAL DE PHYSIQUE IV | 2005年 / 123卷
关键词
CU(IN; GA)SE-2-BASED SOLAR-CELLS; EFFICIENCY; CUINSE2;
D O I
10.1051/jp4:2005123008
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
CuIn1-xGaxSe2 thin films were deposited onto Mo and SnO2 coated glass substrates at potentials in the interval -350 to -600 mV by one step electro-deposition from reagents CuSO4, In-2(SO4)(3), SeO2 and Ga-2(SO4)(3). The influence of Ga-2(SO4)(3) concentration on the compositions of the films was studied. The crystalline structure, composition, morphology, opto-electronic properties of the as-deposited and annealed films was investigated. The films annealed under vacuum at 400 degrees C are polycristallins and show preferred orientation (112) as confirmed by X-ray diffraction analysis. Optical absorption studies of these films indicated that the band gap value for x = 0.32 is of about 1.25 eV.
引用
收藏
页码:53 / 57
页数:5
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