Cu(In,Ga)Se2 based photovoltaic structure by electrodeposition and processing

被引：21

作者：

Calixto, ME ^{[1
]}

Bhattacharya, RN

Sebastian, PJ

Fernandez, AM

Gamboa, SA

Noufi, RN

机构：

[1] Univ Nacl Autonoma Mexico, Energy Res Ctr, Solar H2 Fuel Cell Area, Temixco 62580, Morelos, Mexico

[2] NREL, Golden, CO 80401 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1998年 / 55卷 / 1-2期

关键词：

Cu(In; Ga)Se-2; CdS; ZnO; photovoltaic structure; electrodeposition;

D O I：

10.1016/S0927-0248(98)00043-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CuIn1-xGaxSe2 (CIGS) thin films were formed from an electrodeposited CuInSe2 (CIS) precursor by thermal processing in vacuum in which the film stoichiometry was adjusted by adding In, Ga and Se. The structure, composition, morphology and opto-electronic properties of the as-deposited and selenized CIS precursors were characterized by various techniques. A 9.8% CIGS based thin film solar cell was developed using the electrodeposited and processed him. The cell structure consisted of Mo/CIGS/CdS/ZnO/MgF2. The cell parameters such as J(sc), V-oc, FF and eta were determined from I-V characterization of the cell. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：23 / 29

页数：7

共 12 条

[1] Electrodeposition of In-Se, Cu-Se, and Cu-In-Se thin films [J].