Nucleation control by intermittent supply of dichlorosilane towards the fabrication of polycrystalline silicon thin films with large grain size

被引：8

作者：

Ishikawa, Y ^{[1
]}

Uraoka, Y ^{[1
]}

Fuyuki, T ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 11期

关键词：

nucleation control; intermittent supply; dichlorosilane; large grain size; poly-si film; chemical vapor deposition; SOLAR-CELLS; PRESSURE; CVD;

D O I：

10.1143/JJAP.42.6759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To obtain polycrystalline Si (poly-Si) thin films with large grain size, we propose a nucleation control method by intermittent supply of Si source gas in atmospheric pressure chemical vapor deposition. By intermittent supply of dichlorosilane as Si source gas, the nucleus density was controlled to between 10(5) and 10(7) cm(-2). The maximum grain size of 22 mum with a film thickness of 15 mum was obtained. By optimizing the conditions of intermittent ratio and time, a relatively high preferential orientation of (220) over 65% was achieved. In addition, the poly-Si thin film with continuous columnar structure was obtained.

引用

页码：6759 / 6765

页数：7

共 10 条

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