Crystallographic analysis of high quality poly-Si thin films deposited by atmospheric pressure chemical vapor deposition

被引：7

作者：

Ishikawa, Y ^{[1
]}

Yamamoto, Y ^{[1
]}

Hatayama, T ^{[1
]}

Uraoka, Y ^{[1
]}

Fuyuki, T ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 74卷 / 1-4期

关键词：

polycrystalline silicon; thin film solar cell; chemical vapor deposition; dichlorosilane; crystallinity;

D O I：

10.1016/S0927-0248(02)00081-8

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Crystallinity of thin film polycrystalline silicon (poly-Si) grown by atmospheric pressure chemical vapor deposition has been investigated by X-ray diffraction measurement and Raman spectroscopy. Poly-Si films deposited at high temperatures of 850-1050degreesC preferred to <220> direction. By Raman spectroscopy, the broad peak of around 480-500 cm(-1) belonged to microcrystalline Si (muc-Si) phase was observed even for the poly-Si deposited at 950degreesC. After high-temperature annealing (1050degreesC) <331> direction of poly-Si increased. This result indicates that the pc-Si phase at grain boundary became poly-Si phase preferred to <331> direction by high-temperature annealing. Effective diffusion length of poly-Si films deposited at 1000degreesC was estimated to be 11.9-13.5 mum and 10.2-12.9 mum before and after annealing, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：255 / 260

页数：6

共 5 条

[1] Quasi three-dimensional simulation for thin film polycrystalline silicon solar cells [J].