Development of high-efficiency thin-film Si solar cells using zone-melting recrystallization

被引：9

作者：

Morikawa, H ^{[1
]}

Kawama, Y ^{[1
]}

Matsuno, Y ^{[1
]}

Hamamoto, S ^{[1
]}

Imada, K ^{[1
]}

Ishihara, T ^{[1
]}

Kojima, K ^{[1
]}

Ogama, T ^{[1
]}

机构：

[1] Mitsubishi Elect Corp, Adv Technol R&D Ctr, Itami, Hyogo, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 65卷 / 1-4期

关键词：

thin-film polycrystalline Si; zone-melting recrystallization; SOI;

D O I：

10.1016/S0927-0248(00)00101-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The Via-hole Etching for the Separation of Thin films (VEST) process has been developed based on SOI technology of zone-melting recrystallization (ZMR). In order to obtain high-quality thin-film polycrystalline Si, it was found that the thickness of recrystallized Si film is an important factor. On the other hand, we have newly investigated the module process for the VEST cells. As a result, we have achieved 13.1% efficiency (V-oc: 5.257 V, I-sc: 3.43 A, FF:0.6695) with a module size of 924.2cm(2). (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：261 / 268

页数：8

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