An MOCVD route to In2O3 one-dimensional materials with novel morphologies

被引：25

作者：

Kim, HW ^{[1
]}

Kim, NH ^{[1
]}

Lee, C ^{[1
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 81卷 / 06期

关键词：

D O I：

10.1007/s00339-004-3200-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have successfully synthesized one-dimensional (1-D ) indium oxide (In2O3) arrays by the metalorganic chemical vapor deposition (MOCVD) method. We have characterized the products by means of X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM). The SEM images showed that the 1-D materials with serrated surfaces had cross-sections in the shape of an acute triangle. The XRD and TEM studies revealed that the 1-D materials possessed a single-crystalline cubic structure and that the growth occurred preferentially along the [111] direction.

引用

页码：1135 / 1138

页数：4

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