Diameter-controlled growth of single-crystalline In2O3 nanowires and their electronic properties

被引：349

作者：

Li, C ^{[1
]}

Zhang, DH ^{[1
]}

Han, S ^{[1
]}

Liu, XL ^{[1
]}

Tang, T ^{[1
]}

Zhou, CW ^{[1
]}

机构：

[1] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA

来源：

ADVANCED MATERIALS | 2003年 / 15卷 / 02期

关键词：

D O I：

10.1002/adma.200390029

中图分类号：

O6 [化学];

学科分类号：

0703 [化学];

摘要：

Single-crystalline In2O3 nanowires have been synthesized using a laser ablation approach. Precise control over the nanowire diameter was achieved by using monodispersed gold clusters as the catalyst. Extensive material characterization has been carried out to determine the lattice structure (see Figure) and dimensions of these nanowires. Individual In2O3 nanowires have been utilized to construct field-effect transistors with on/off ratios up to 1000.

引用

页码：143 / +

页数：5

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