Organic nanodielectrics for low voltage carbon nanotube thin film transistors and complementary logic gates

被引:102
作者
Hur, SH
Yoon, MH
Gaur, A
Shim, M
Facchetti, A
Marks, TJ
Rogers, JA
机构
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
[3] Univ Illinois, Dept Mat & Sci Engn, Beckman Inst, Frederick & Seitz Mat Res Lab, Urbana, IL 61801 USA
关键词
D O I
10.1021/ja0553203
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report the implementation of three dimensionally cross-linked, organic nanodielectric multilayers as ultrathin gate dielectrics for a type of thin film transistor device that uses networks of single-walled carbon nanotubes as effective semiconductor thin films. Unipolar n- and p-channel devices are demonstrated by use of polymer coatings to control the behavior of the networks. Monolithically integrating these devices yields complementary logic gates. The organic multilayers provide exceptionally good gate dielectrics for these systems and allow for low voltage, low hysteresis operation. The excellent performance characteristics suggest that organic dielectrics of this general type could provide a promising path to SWNT-based thin film electronics. Copyright © 2005 American Chemical Society.
引用
收藏
页码:13808 / 13809
页数:2
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