Oscillatory behavior in electrochemical deposition reaction of polycrystalline silicon thin films through reduction of silicon tetrachloride in a molten salt electrolyte

被引:11
作者
Matsuda, T
Nakamura, S
Ide, K
Nyudo, K
Yae, SJ
Nakato, Y
机构
[1] OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN
[2] OSAKA UNIV, RES CTR PHOTOENERGET ORGAN MAT, TOYONAKA, OSAKA 560, JAPAN
关键词
D O I
10.1246/cl.1996.569
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A new electrochemical oscillation is found for reduction reaction of silicon tetrachloride on a partially immersed single crystal n-Si electrode in a lithium chloride-potassium chloride eutectic melt electrolyte. The reduction of SiCl4, which is almost insoluble in the electrolyte, occurs mainly near the upper edge of an electrolyte meniscus on the electrode, and it is discussed that the oscillation is caused by a change in the height of the meniscus due to a change in the chemical structure (and hence the interfacial tension) of the electrode surface with progress of the silicon deposition reaction.
引用
收藏
页码:569 / 570
页数:2
相关论文
共 12 条