In situ transport rate monitor during ZnSe crystal growth by PVT

被引：2

作者：

Fujiwara, S

Matsumoto, K

Shirakawa, T

机构：

[1] Basic High-Technology Laboratories, Sumitomo Electric Industries, Ltd., Osaka 554, 1-1-3, Shimaya, Konohana-ku

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 165卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(96)00168-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Non-stoichiometry of the vapor phase in a growth tube for the crystal growth of ZnSe by physical vapor transport (PVT) was investigated using an in situ transport rate monitor. The unintentional non-stoichiometry by excess Zn was concluded by the dependence of the transport rate on the evaporation temperature.

引用

页码：169 / 171

页数：3

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