Rashba Hamiltonian and electron transport

被引:168
作者
Molenkamp, LW [1 ]
Schmidt, G
Bauer, GEW
机构
[1] Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany
[2] Delft Univ Technol, Dept Appl Phys, Theoret Phys Grp, NL-2628 CJ Delft, Netherlands
[3] Delft Univ Technol, DIMES, NL-2628 CJ Delft, Netherlands
来源
PHYSICAL REVIEW B | 2001年 / 64卷 / 12期
关键词
D O I
10.1103/PhysRevB.64.121202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Rashba Hamiltonian describes the splitting of the conduction band as a result of spin-orbit coupling in the presence of an external field and is commonly used to model the electronic structure of confined narrow-gap semiconductors. Due to the mixing of spin states some care has to be exercised in the calculation of transport properties. We derive the velocity operator for the Rashba-split conduction band and demonstrate that the transmission of an interface between a ferromagnet and a Rashba-split semiconductor does not depend on the magnetization direction, in contrast with previous assertions in the literature.
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页数:4
相关论文
共 11 条
[1]  
BYCHKOV YA, 1984, JETP LETT+, V39, P78
[2]   ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].
DATTA, S ;
DAS, B .
APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667
[3]   Enhanced magnetoresistance effect in layered systems [J].
Ferreira, MS ;
Castro, JAE ;
Muniz, RB ;
Villeret, M .
APPLIED PHYSICS LETTERS, 1999, 75 (15) :2307-2309
[4]   Spin filtering and an enhanced regime of giant magnetoresistance [J].
Ferreira, MS ;
Castro, JDE ;
Muniz, RB ;
Villeret, M .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (12) :2833-2846
[5]   Injection and detection of a spin-polarized current in a light-emitting diode [J].
Fiederling, R ;
Keim, M ;
Reuscher, G ;
Ossau, W ;
Schmidt, G ;
Waag, A ;
Molenkamp, LW .
NATURE, 1999, 402 (6763) :787-790
[7]   Ideal spin filters: A theoretical study of electron transmission through ordered and disordered interfaces between ferromagnetic metals and semiconductors [J].
Kirczenow, G .
PHYSICAL REVIEW B, 2001, 63 (05)
[8]  
Nitta J, 1997, PHYS REV LETT, V78, P1335, DOI 10.1103/PhysRevLett.78.1335
[9]   Electrical spin injection in a ferromagnetic semiconductor heterostructure [J].
Ohno, Y ;
Young, DK ;
Beschoten, B ;
Matsukura, F ;
Ohno, H ;
Awschalom, DD .
NATURE, 1999, 402 (6763) :790-792
[10]   Origin of beat patterns in the quantum magnetoresistance of gated InAs/GaSb and InAs/AlSb quantum wells [J].
Rowe, ACH ;
Nehls, J ;
Stradling, RA ;
Ferguson, RS .
PHYSICAL REVIEW B, 2001, 63 (20)