The effect of the amorphous insulator layer on conduction behaviors of the silica/indium tin oxide two-layer films

被引：5

作者：

Kim, SW ^{[1
]}

Shin, YW ^{[1
]}

Bae, DS ^{[1
]}

Lee, JH ^{[1
]}

Kim, J ^{[1
]}

Lee, HW ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Nanomat Res Ctr, Seoul 136791, South Korea

来源：

THIN SOLID FILMS | 2003年 / 437卷 / 1-2期

关键词：

silicon oxide; indium tin oxide; conductivity; additive;

D O I：

10.1016/S0040-6090(03)00681-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of the amorphous insulator layer on conduction behavior of spin coated silica/sputtered indium tin oxide two-layer film was studied in terms of impedance spectroscopy measurements, and current-voltage characterizatics. I-V characteristics of the two-layer films have shown that the conduction mechanism changes from direct tunneling to space-charge-limited conduction, when zinc cations are added to the silica layer. An addition of the ionic dopant leads to a large decrease in sheet resistance of the two-layer film as shown in the Cole-Cole plot. Consequently, the conductivity enhancement of the two-layer film without a reduction in transparency was achieved by the introduction of zinc cations into the amorphous silica layer. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：242 / 247

页数：6