Silicide formation at palladium surfaces. Part II: Amorphous silicide growth at the Pd(100) surface

被引：6

作者：

Kampshoff, E ^{[1
]}

Walchli, N ^{[1
]}

Kern, K ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Phys Expt, CH-1015 Lausanne, Switzerland

来源：

SURFACE SCIENCE | 1998年 / 406卷 / 1-3期

关键词：

growth; infrared absorption spectroscopy; metal-semiconductor interfaces; palladium; scanning tunneling microscopy; silicon;

D O I：

10.1016/S0039-6028(98)00100-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The morphology and reactivity of the Si/Pd(100) surface is studied by the in-situ combination of scanning tunneling microscopy (STM) and reflection absorption infrared spectroscopy (RAIRS) of adsorbed CO. Si adsorption on Pd( 100) is found to be reactive: above 140 K the deposited Si reacts with the substrate to form palladium silicide. In the studied temperature range, 150 K less than or equal to T less than or equal to 600 K, the silicide structure is amorphous. STM and RAIRS measurements reveal an incomplete chemical reaction at the interface with unreacted Si clusters interspersed in a homogeneous film of Pd2Si. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：117 / 124

页数：8

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