Radiative and non-radiative inter-subband transition in self assembled quantum dots

被引：26

作者：

Jiang, HT ^{[1
]}

Singh, J ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect & Comp Sci, Ann Arbor, MI 48109 USA

来源：

PHYSICA E | 1998年 / 2卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

quantum dot; relaxation time; inter-subband detector; inter-subband lasers;

D O I：

10.1016/S1386-9477(98)00147-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Self-assembled quantum dot structures have emerged as zero-dimensional structures with high radiative efficiency. In this paper we examine and compare various non-radiative and radiative scattering mechanisms for inter-subband transitions in self-assembled InAs/GaAs quantum dots. Due to the large energy separation between first excited and ground states, we find that phonon-induced scattering is ineffectual and electron-hole scattering is the dominant non-radiative scattering process. Consequences for the inter-subband devices are also discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：720 / 724

页数：5

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