Growth of 3C-SiC on si by low temperature CVD

We report on the growth of 3C-SiC/Si using propane and silane as precursor gases. All layers were deposited on exactly < 100 > oriented Si substrates. The growth temperature ranged from 1200 degreesC to 1350 degreesC and the carbonization temperature from 1150 degreesC to 1350 degreesC. We focused our study on the optimization of the surface morphology and the suppression of interfacial voids at low growth temperature. All layers were characterized by X-ray diffraction (both single diffraction and omega -scan), micro-Raman on cleaved edges, AFM, optical microscopy,2K photoluminescence and IR reflectivity. We have developed a 1150 degreesC carbonization step which, combined with a growth temperature of 1250 degreesC results in good quality material.