State of the art of 3C-SiC/silicon on insulators

被引：45

作者：

Camassel, J ^{[1
]}

机构：

[1] Univ Montpellier 2, CNRS, F-34095 Montpellier 5, France

[2] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.589954

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The state of the art of 3C-SiC deposited on various silicon pn insulator substrates is reviewed and the result of structural (x-ray and transmission electron microscope) properties as well as micro-Raman, infrared, and electrical examinations is compared with 3C-SiC/Si. It is shown that in order to fully optimize this novel material system one has to call at the same time for a better thermal stability of the current oxides and for an optimized elastic compliance of the buried layer system silicon/silicon dioxide. A proper way seems to lower the standard SiC deposition temperature. (C) 1998 American Vacuum Society.

引用

页码：1648 / 1654

页数：7

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