Polymeric Memory Elements and Logic Circuits that Store Multiple Bit States

被引:32
作者
de Ruiter, Graham [1 ]
Wijsboom, Yair H. [1 ]
Oded, Noa
van der Boom, Milko E. [1 ]
机构
[1] Weizmann Inst Sci, Dept Organ Chem, IL-76100 Rehovot, Israel
基金
以色列科学基金会;
关键词
sequential logic; molecular memory; reconfigurable; functional integration; thin films; NONVOLATILE MEMORY; MOLECULAR LOGIC; GATES; OPERATIONS; ELECTROCHROMICS; COMPLEXES; TRANSPORT; COMPOSITE; LIGHT; ION;
D O I
10.1021/am1007497
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The ever-increasing flow of information requires new approaches for high-density data storage (HDDS). Here, we present a novel solution that incorporates the easily accessible polymer poly(3,4-ethylenedioxythiophene) (PEDOT) with multistate memory. The electrical addressable polymer is able to store up to five different memory states which are stable up to 20 min. The observed memory states are generated by the optical output signature of the PEDOT deposited on indium oxide (ITO) coated glass upon applying specific electrical inputs. Moreover, the demonstrated platforms can be represented by a general logic circuit which allows the construction of multistate memory, such as flip-flops and flip-flap-flop logic circuits.
引用
收藏
页码:3578 / 3585
页数:8
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