Deposition rate optimization in SiH4/H2 PECVD of hydrogenated microcrystalline silicon

被引：22

作者：

Amanatides, E ^{[1
]}

Mataras, D ^{[1
]}

Rapakoulias, DE ^{[1
]}

机构：

[1] Univ Patras, Dept Chem Engn, Plasma Technol Lab, Patras 26500, Greece

来源：

THIN SOLID FILMS | 2001年 / 383卷 / 1-2期

关键词：

microcrystalline silicon; deposition rate; hydrogen dilution; frequency effect;

D O I：

10.1016/S0040-6090(00)01603-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Intrinsic hydrogenated microcrystalline silicon films have been deposited by Plasma Enhanced Chemical Vapor Deposition using highly diluted SiH4 in H-2 discharges, aiming at the increase of the deposition rate. Following a systematic optimization of the main process parameters, an increase of the film growth rate up to 7.5 A/s has been achieved, from 1 Torr 6% SiH4 in H-2 dust-free discharges at a frequency of 30 MHz. The experimental results are combined to a mass transfer model that can very well predict the deposition rate, for revealing the main reasons leading to the fast growth of muc-Si:H. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：15 / 18

页数：4

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