Electrical transport studies in nanocrystalline CdSe/SiO2 composite films

被引：13

作者：

Bera, SK

Chaudhuri, S

Gupta, RP

Pal, AK ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, W Bengal, India

[2] Cent Elect Engn Res Inst, Pilani 333031, Rajasthan, India

来源：

THIN SOLID FILMS | 2001年 / 382卷 / 1-2期

关键词：

nanocrystalline films; cadmium selenide; variable range hopping;

D O I：

10.1016/S0040-6090(00)01775-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SiO2/CdSe/SiO2 composite films in nanocrystalline form were deposited on quartz substrates at similar to 20 Pa with deposition temperatures ranging from 220 to 240 K using a multi-target magnetron sputtering system. Optical, electrical, and microstructural (TEM and AFM) studies were carried out on the composite films. Studies of the variation of conductivity with temperature indicated Efros hopping within the Coulomb gap to be the predominant carrier transport process in the composite films. Furthermore, a crossover from a 'soft' to a 'hard' Coulomb gap was noticed with lowering of temperature. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：86 / 94

页数：9

共 31 条

[21] Nanocrystalline CdTe films deposited by high-pressure sputtering: carrier transport at low temperature [J].