Thermal conductivity measurement of submicron-thick aluminium oxide thin films by a transient thermo-reflectance technique

被引：33

作者：

Bai Su-Yuan ^{[1
,2
]}

Tang Zhen-An ^{[1
]}

Huang Zheng-Xing ^{[1
]}

Yu Jun ^{[1
]}

Wang Jia-Qi ^{[1
]}

机构：

[1] Dalian Univ Technol, Dept Elect Engn, Dalian 116024, Peoples R China

[2] Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2008年 / 25卷 / 02期

关键词：

D O I：

10.1088/0256-307X/25/2/065

中图分类号：

O4 [物理学];

学科分类号：

0702 [物理学];

摘要：

Thermal conductivity of submicron-thick aluminium oxide thin Elms prepared by middle frequency magnetron sputtering is measured using a transient thermo-reflectance technique. A three-layer model based on transmission line theory and the genetic algorithm optimization method are employed to obtain the thermal conductivity of thin films and the interfacial thermal resistance. The results show that the average thermal conductivity of 330-1000 nm aluminium oxide thin films is 3.3 Wm(-1)K(-1) at room temperature. No significant thickness dependence is found. The uncertainty of the measurement is less than 10%.

引用

页码：593 / 596

页数：4

共 13 条

[1]

Thermal property measurement of thin aluminum oxide layers for giant magnetoresistive (GMR) head applications [J].