Study on electrical properties of CdS films prepared by chemical pyrolysis deposition

被引：26

作者：

Cha, D

Kim, S

Huang, NK ^{[1
]}

机构：

[1] Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Educ Minist China, Chengdu 610064, Peoples R China

[2] Kunsan Natl Univ, Dept Phys, Kunsan 573701, South Korea

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 106卷 / 01期

关键词：

CdS films; microanalysis; electrical property;

D O I：

10.1016/j.mseb.2003.09.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

US films were prepared with chemical pyrolysis deposition (CPD) at different temperature followed by annealing. The results of microanalyses show that the prepared US films were dense and uniform and that their average grain sizes varied for different growth temperature. The US films deposited at 400-450degreesC were poly-crystalline with wurtzite phase structure, and its lattice constants are: a = 4.135 and c = 6.713 Angstrom. Hall measurements on electrical properties at room temperature show that resistivity, carrier density and mobility of the non-annealed US poly-crystalline films deposited at 400degreesC were 1.48 x 10(4) Omega cm, 1.82 x 10(11) cm(-3) and 2.42 x 10(3) cm(2)/(V s), respectively. The electrical properties of US films can be improved by annealing at a certain temperature range if these films are used as optical windows for solar cell. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：63 / 68

页数：6

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