Asymmetric GaAs/AlGaAs T wires with large confinement energies

被引：21

作者：

Gislason, H

Langbein, W

Hvam, JM

机构：

[1] Mikroelektronik Centret, Technical University of Denmark, Building 345E

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 21期

关键词：

D O I：

10.1063/1.118025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the design and growth of asymmetric T-shaped quantum wires with large one-dimensional confinement energies. Prior to growth, the optimal structure for a given (110) well width is determined by a calculation, The structures are made by molecular beam epitaxy cleaved edge overgrowth. We demonstrate a confinement of 53 meV in an experimental structure consisting of a narrow (110) oriented GaAs/Al0.3Ga0.7As quantum well overgrown on much wider(001) oriented Al0.14Ga0.86As/Al0.3Ga0.7As wells. (C) 1996 American Institute of Physics.

引用

页码：3248 / 3250

页数：3

共 13 条

[1]

Adachi S., 1993, PROPERTIES ALUMINUM

[2] A NEW ONE-DIMENSIONAL QUANTUM WELL STRUCTURE [J].