The first low voltage, low noise differential silicon microphone, technology development and measurement results

被引：12

作者：

Rombach, P ^{[1
]}

Müllenborn, M ^{[1
]}

Klein, U ^{[1
]}

Rasmussen, K ^{[1
]}

机构：

[1] Microelect AS, CAT, DTU, DK-2800 Lyngby, Denmark

来源：

14TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2001年

关键词：

D O I：

10.1109/MEMSYS.2001.906474

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first differential silicon microphone is presented. This capacitive working device consists of two backplates with a membrane in between. Due to the balanced arrangement the air gap can be minimized. Thus, a higher electrical field and sensitivity can be achieved for low voltages. A dedicated process sequence has been developed in order to get the optimum mechanical and electrical properties for all structural layers. Furthermore, a sandwich structure has been developed to achieve a reproducible, very sensitive microphone membrane with a thickness of only 0.5 mum and a stress of 45MPa. The total sensitivity for a bias of 1.5V was measured to be 13mV/Pa and the A-weighted equivalent input noise was measured to be 22.5dB SPLA. The upper limit of the dynamic range has been determined to be 118dB SPL and the total harmonic distortion at 80dB SPL is below 0.26 %.

引用

页码：42 / 45

页数：2

共 6 条

[1] Micromachined double backplate differential capacitive microphone [J].