Air-Stable Ambipolar Field-Effect Transistors and Complementary Logic Circuits from Solution-Processed n/p Polymer Heterojunctions

被引：41

作者：

Kim, Felix Sunjoo

Ahmed, Eilaf

Subramaniyan, Selvam

Jenekhe, Samson A. ^{[1
]}

机构：

[1] Univ Washington, Dept Chem Engn, Seattle, WA 98195 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2010年 / 2卷 / 11期

关键词：

polymer/polymer heterojunction; organic/organic interface; ambipolar charge transport; organic field-effect transistor; complementary logic circuit; HIGH-ELECTRON-MOBILITY; THIN-FILM TRANSISTORS; ACCEPTOR CONJUGATED POLYMERS; ORGANIC HETEROSTRUCTURE; CHARGE-TRANSPORT; INTERFACES; BEHAVIOR; DONOR;

D O I：

10.1021/am1006996

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate the use of n/p polymer/polymer heterojunction deposited by sequential solution processing to fabricate ambipolar field-effect transistors and complementary logic circuits. Electron and hole mobilities in the transistors were similar to 0.001-0.01 cm(2)/(V, s) in air without encapsulation. Complementary circuits integrating multiple ambipolar transistors into NOT, NAND and NOR gates were fabricated and shown to exhibit sharp signal switching with a high voltage gain.

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页码：2974 / 2977

页数：4

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