Optical properties and device applications of (InGa)As self-assembled quantum dots grown on (311)B GaAs substrates

被引：49

作者：

Polimeni, A

Henini, M

Patane, A

Eaves, L

Main, PC

Hill, G

机构：

[1] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England

[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 10期

关键词：

D O I：

10.1063/1.121961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the optical properties of (InGa)As self-assembled quantum dots grown on (311)B-oriented GaAs substrates. The luminescence linewidth is considerably narrower than that of similar samples grown on (100). The difference is explained in terms of the in-plane coupling of dots which is more significant in (311)B. In order to assess the device potential of (311)B (InGa)As dots, we have studied the properties of edge emitting lasers by extending the well-known technology for (100) to the (311)B devices. (C) 1998 American Institute of Physics. [S0003-6951(98)02136-6].

引用

页码：1415 / 1417

页数：3

共 16 条

[1] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES
GOLDSTEIN, L
GLAS, F
MARZIN, JY
CHARASSE, MN
LEROUX, G
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1099 - 1101
[2] Photoluminescence and time-resolved photoluminescence characteristics of InxGa((1-x))As/GaAs self-organized single- and multiple-layer quantum dot laser structures
Kamath, K
Chervela, N
Linder, KK
Sosnowski, T
Jiang, HT
Norris, T
Singh, J
Bhattacharya, P
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (07) : 927 - 929
[3] Formation of high-density quantum dot arrays by molecular beam epitaxy
Kawabe, M
Chun, YJ
Nakajima, S
Akahane, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B): : 4078 - 4083
[4] Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
Ledentsov, NN
Shchukin, VA
Grundmann, M
Kirstaedter, N
Bohrer, J
Schmidt, O
Bimberg, D
Ustinov, VM
Egorov, AY
Zhukov, AE
Kopev, PS
Zaitsev, SV
Gordeev, NY
Alferov, ZI
Borovkov, AI
Kosogov, AO
Ruvimov, SS
Werner, P
Gosele, U
Heydenreich, J
[J]. PHYSICAL REVIEW B, 1996, 54 (12) : 8743 - 8750
[5] High index orientation effects of strained self-assembled InGaAs quantum dots
Lubyshev, DI
GonzalezBorrero, PP
Marega, E
Petitprez, E
Basmaji, P
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2212 - 2215
[6] MAXIMOV MV, 1997, I PHYS C SER, V155
[7] Structural and optical characterization of InAs/InGaAs self-assembled quantum dots grown on (311)B GaAs
Nishi, K
Mirin, R
Leonard, D
MedeirosRibeiro, G
Petroff, PM
Gossard, AC
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) : 3466 - 3470
[8] Spontaneous lateral alignment of In0.25Ga0.75As self-assembled quantum dots on (311)B GaAs grown by gas source molecular beam epitaxy
Nishi, K
Anan, T
Gomyo, A
Kohmoto, S
Sugou, S
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (26) : 3579 - 3581
[9] Self-organized growth of quantum-dot structures
Notzel, R
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (10) : 1365 - 1379
[10] HIGHLY UNIFORM INGAAS/GAAS QUANTUM DOTS (SIMILAR-TO-15 NM) BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
OSHINOWO, J
NISHIOKA, M
ISHIDA, S
ARAKAWA, Y
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (11) : 1421 - 1423

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