Low temperature thermal, thermoelectric, and thermomagnetic transport in indium rich Pb1-xSnxTe alloys

被引：62

作者：

Jovovic, V. ^{[1
]}

Thiagarajan, S. J. ^{[1
]}

Heremans, J. P. ^{[1
]}

Komissarova, T. ^{[2
]}

Khokhlov, D. ^{[2
]}

Nicorici, A. ^{[3
]}

机构：

[1] Ohio State Univ, Columbus, OH 43210 USA

[2] Moscow MV Lomonosov State Univ, Moscow 119992, Russia

[3] Moldava Acad Sci, Inst Appl Phys, MD-2004 Kishinev, Moldova

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 05期

关键词：

D O I：

10.1063/1.2890150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Galvanomagnetic and thermomagnetic data of single crystal indium rich Pb(1-x)Sn(x)Te are analyzed, and electronic band parameters are calculated using nonparabolic band model. Transport properties at 80 K are presented as a function of Sn (x=0-0.3) and In concentrations. Our results indicate pinning of Fermi level by indium impurity levels in these alloys. Effects of interaction of band with impurity level are investigated in terms of change in effective mass and energy scattering exponent. Indium doping slightly improves the thermoelectric properties of PbSnTe alloys. (c) 2008 American Institute of Physics.

引用

页数：7

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