Low temperature deposition of Pb(Zr,Ti)O3 film by source gas pulse-introduced metalorganic chemical vapor deposition

被引：38

作者：

Aratani, M ^{[1
]}

Ozeki, T ^{[1
]}

Funakubo, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 4A期

关键词：

PZT; MOCVD; pulse-MOCVD; continuous-MOCVD; low temperature deposition; ferroelectricity; buffer layer;

D O I：

10.1143/JJAP.40.L343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We prepared Pb(Zr.Ti)O-3 [PZT] thin films on (111)Pt/Ti/SiO2/Si substrates at 395 to 580 degreesC by metalorganic chemical vapor deposition (MOCVD). PZT thin films with Zr/(Zr + Ti) = 0.62 prepared by conventional continuous source gas introduction (continuous-MOCVD) and pulse introduction (pulse-MOCVD) were compared. Film with higher crystallinity and smoother surfaces were obtained by pulse-MOCVD compared with continuous-MOCVD. Moreover, the leakage current density of the film decreased and ferroelectricity increased with pulse-MOCVD. Ferroelectricity decreased with decreasing the deposition temperature. but the remanent polarization (Pr) value was 22.5 muC/cm(2) for the film with a 5 nm-thick PbTiO3 buffer layer deposited at 395 degreesC by pulse-MOCVD, while ferroelectricity was not obtained for the film deposited by continuous-MOCVD at the same deposition temperature.

引用

页码：L343 / L345

页数：3

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