THIN-FILM GROWTH OF PB(ZR, TI)O3 BY PHOTOENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING NO2

Ferroelectric Pb(Zr, Ti)03 thin films were successfully grown by photoenhanced metalorganic chemical vapor deposition (photo-MOCVD), using Pb(C2H5)4, Zr(O-t-C4H9)4, Ti(O-i-C3H7)4 and NO2. Both tetragonal and rhombohedral Pb(Zr, Ti)O3 thin films were obtained at substrate temperatures higher than 535-degrees-C. Significant effects of photoirradiation on the growth behavior were observed. The observed effects included an increase in the growth rate and film compositional ratio of Zr/(Zr+Ti), and a change in the electrical properties. A decrease in the growth temperature of the Pb(Zr, Ti)O3 films caused by photoirradiation was observed only when the films were grown at low gas supply ratios of [Zr]/([Zr]+[Ti]). The photodeposited Pb(Zr, Ti)O3 films obtained showed good ferroelectric properties, good leakage characteristic and good step coverage.