EFFECTS OF THE REACTION PRESSURE ON THE GROWTH OF PBTIO3 THIN-FILMS BY THE PHOTOCHEMICAL VAPOR-DEPOSITION METHOD

被引：13

作者：

ANDO, A ^{[1
]}

KATAYAMA, T ^{[1
]}

SHIMIZU, M ^{[1
]}

SHIOSAKI, T ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT ELECTR,SAKYO KU,KYOTO 606,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 9B期

关键词：

PHOTO-CVD; PBTIO3; FILM; REACTION PRESSURE; DEPOSITION RATE; CRYSTALLINE STRUCTURE;

D O I：

10.1143/JJAP.31.3001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of PbTiO3 thin films was carried out by the photo-chemical vapor deposition (photo-CVD) method and by varying the growth parameters of substrate temperature, reaction pressure and UV light irradiation. In order to clarify the effects of these parameters on the thin film growth; a three-way-lay-out factorial experiment was done. In the higher temperature and pressure region the vapor phase reaction is dominant. At lower temperatures and pressures, the reaction on the substrate becomes significant. These tendencies were observed under conditions with and without UV light irradiation. The synthesis of PbTiO3 on Pt/sapphire was assisted by UV light irradiation.

引用

页码：3001 / 3004

页数：4

共 6 条

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