Direct measurement of ion-influenced surface diffusion

被引：40

作者：

Ditchfield, R ^{[1
]}

Seebauer, EG ^{[1
]}

机构：

[1] Univ Illinois, Dept Chem Engn, Urbana, IL 61801 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.82.1185

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The influences of low-energy ion bombardment on surface diffusion have been quantified directly for the first time. Bombardment of germanium diffusing on silicon by noble gas ions between 15 and 65 eV affects the diffusional activation energy and preexponential factor in a strongly temperature-dependent way. Curiously, above about 850 degrees C the ion-influenced diffusivity actually falls below the thermal value. The results have significant implications for thin film growth by ion-assisted deposition processes. [S0031-9007(99)08397-0].

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页码：1185 / 1188

页数：4

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