A high-performance ultraviolet photoconductive detector based on a ZnO film grown by RF sputtering

被引：39

作者：

Bi, Zhen ^{[1
,2
]}

Zhang, Jingwen ^{[2
,3
]}

Bian, Xuming ^{[2
,3
]}

Wang, Dong ^{[2
,3
]}

Zhang, Xin'an ^{[2
,3
]}

Zhang, Weifeng ^{[3
]}

Hou, Xun ^{[1
,2
,3
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Sci, Xian 710068, Peoples R China

[2] Xi An Jiao Tong Univ, Key Lab Photon Technol Informat, Xian 710068, Peoples R China

[3] Henan Med Univ, Sch Phys & Photoelect, Kaifeng 475000, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 05期

关键词：

ZnO; ultraviolet; photodetector;

D O I：

10.1007/s11664-007-0329-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-performance metal-semiconductor-metal (MSM) ultraviolet photodetector was fabricated based on a ZnO film with Al interdigitated (IDT) electrodes. A c-axis-oriented ZnO film was grown on a SiO2/Si (100) substrate at room temperature by a reactive radiofrequency (RF) sputtering technique and then annealed at 900 degrees C in pure O-2 ambient for 1 h. The fabricated ZnO ultraviolet (UV) detector demonstrated a high responsivity of 2069 A/W when biased at 5 V, which could be attributed to the influence of the annealing process in pure O-2 ambient. The response time measurement showed a rise time (10-90%) of 45.1 ns and a decay time (1-1/e) of 541 mu s.

引用

页码：760 / 763

页数：4

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