Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD

被引：465

作者：

Liu, Y

Gorla, CR

Liang, S

Emanetoglu, N

Lu, Y

Shen, H

Wraback, M

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

[2] USA, Res Lab, Sensors & Electron Devices Directorate, AMSRL SE EM, Adelphi, MD 20783 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 01期

关键词：

zinc oxide (ZnO); thin films; metalorganic chemical vapor deposition (MOCVD); ultraviolet (UV); photodetectors; doping; wide bandgap material;

D O I：

10.1007/s11664-000-0097-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality zinc oxide (ZnO) films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range of 350 degrees C to 600 degrees C. In-situ nitrogen compensation doping was performed using NH3. Microstructural and optical properties of the films, as well as the N-doping effects, were studied. The metal-semiconductor-metal ultraviolet sensitive photodetectors were fabricated on N-doped epitaxial ZnO films. The detector showed fast photoresponse, with a rise time of 1 mu s and a fall time of 1.5 mu s. Low-frequency photoresponsivity, on the order of 400 A/W at 5 V bias, was obtained.

引用

页码：69 / 74

页数：6

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