Hot Carrier Transport and Photocurrent Response in Graphene

被引：397

作者：

Song, Justin C. W. ^{[1
,2
]}

Rudner, Mark S. ^{[3
]}

Marcus, Charles M. ^{[3
]}

Levitov, Leonid S. ^{[1
]}

机构：

[1] MIT, Dept Phys, Cambridge, MA 02139 USA

[2] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA

[3] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

来源：

NANO LETTERS | 2011年 / 11卷 / 11期

关键词：

Graphene; photocurrent; hot carrier; carrier multiplication; photothermoelectric; MULTIPLICATION;

D O I：

10.1021/nl202318u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Strong electron electron interactions in graphene are expected to result in multiple-excitation generation by the absorption of a single photon. We show that the impact of carrier multiplication on photocurrent response is enhanced by very inefficient electron cooling, resulting in an abundance of hot carriers. The hot-carrier-mediated energy transport dominates the photoresponse and manifests itself in quantum efficiencies that can exceed unity, as well as in a characteristic dependence of the photocurrent on gate voltages. The pattern of multiple photocurrent sign changes as a function of gate voltage provides a fingerprint of hot-carrier-dominated transport and carrier multiplication.

引用

页码：4688 / 4692

页数：5

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