Photovoltaic effect in ideal carbon nanotube diodes

被引：237

作者：

Lee, JU ^{[1
]}

机构：

[1] GE Global Res Ctr, Niskayuna, NY 12309 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 07期

关键词：

D O I：

10.1063/1.2010598

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that individual single-walled carbon nanotubes (SWNTs) can form ideal p-n junction diodes. An ideal behavior is the theoretical limit of performance for any diode, a highly sought after goal in all electronic materials development. We further elaborate on their properties by examining photovoltaic effects, an application where its performance is intimately related to the quality of the diode. Under illumination, SWNT diodes show significant power conversion efficiencies owing to enhanced properties of an ideal diode. (C) 2005 American Institute of Physics.

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