Determination of overlayer thickness by QUASES analysis of photon-excited KLL Auger spectra of Ni and Cu films

被引:19
作者
Kövér, L
Tougaard, S
Tóth, J
Daróczi, L
Szabó, I
Langer, G
Menyhárd, M
机构
[1] Hungarian Acad Sci, Inst Nucl Res, H-4001 Debrecen, Hungary
[2] Odense Univ, Dept Phys, DK-5230 Odense M, Denmark
[3] Univ Debrecen, Dept Solid State Phys, H-4010 Debrecen, Hungary
[4] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
关键词
Ni and Cu thin films; x-ray-excited AES; KLL Auger spectra; thickness determination;
D O I
10.1002/sia.988
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Quantitative characterization of overlayer nanostructures is important for many practical applications and has become a feasible task for electron spectroscopy. The QUASES (Quantitative Analysis of Surfaces by Electron Spectroscopy) software package, developed recently, provides a general tool for quantification in XPS by analysing the spectral shape of the background caused by inelastic scattering of the signal electrons and has been applied successfully for determining the thickness of surface films in the nanometre range. In this work the application of such analysis is extended to metallic films having several tens of nanometre thickness and the accuracy of the results is tested by using independent methods. Both Ni and Cu KLL Auger spectra were photoexcited from Ni and Cu overlayers (deposited onto Si substrates) of different thicknesses in the 10-60 nm range, and were measured with high energy resolution. The film thickness values from the QUASES spectral shape analysis are compared with the data obtained by using a quartz crystal microbalance, cross-sectional transmission electron microscopy and scanning probe microscopy (SPM). Good consistency has been found for the thickness values obtained from the spectral shape analysis and from microscopy, especially for Ni films. Assuming nominal film thickness, the values of the inelastic mean free path of 6-7 keV energy electrons in Ni and Cu were also determined, showing good (Ni) or reasonable (Cu) agreement with those proposed by Powell and Jablonski. The effect of island formation was shown by the QUASES spectral shape analysis and confirmed by SPM, Copyright (C) 2001 John Wiley & Sons, Ltd.
引用
收藏
页码:271 / 279
页数:9
相关论文
共 21 条
[1]  
Bearden J. A., 1967, REV MOD PHYS, V39, P86
[2]   ANGLE-RESOLVED XPS AND AES - DEPTH-RESOLUTION LIMITS AND A GENERAL COMPARISON OF PROPERTIES OF DEPTH-PROFILE RECONSTRUCTION METHODS [J].
CUMPSON, PJ .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1995, 73 (01) :25-52
[3]   INELASTIC PEAK SHAPE METHOD APPLIED TO QUANTITATIVE SURFACE-ANALYSIS OF INHOMOGENEOUS SAMPLES [J].
HANSEN, HS ;
JANSSON, C ;
TOUGAARD, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :2938-2944
[4]   SOME APPLICATIONS OF HIGH-ENERGY, HIGH-RESOLUTION AUGER-ELECTRON SPECTROSCOPY USING BREMSSTRAHLUNG RADIATION [J].
KOVER, L ;
VARGA, D ;
CSERNY, I ;
TOTH, J ;
TOKESI, K .
SURFACE AND INTERFACE ANALYSIS, 1992, 19 (1-12) :9-15
[5]   Evaluation of calculated and measured electron inelastic mean free paths near solid surfaces [J].
Powell, CJ ;
Jablonski, A .
JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA, 1999, 28 (01) :19-62
[6]   KALPHA2/KALPHA1 TRANSITION PROBABILITIES IN ELEMENTS WITH ZISLESSTHANOREQUALTO50 [J].
SALEM, SI ;
WIMMER, RJ .
PHYSICAL REVIEW A, 1970, 2 (04) :1121-&
[7]  
SALEM SI, 1979, DATA NUCL DATA TABLE, V18, P236
[8]   NANOSTRUCTURE OF THIN METAL-FILMS ON SILICON(111) INVESTIGATED BY X-RAY PHOTOELECTRON-SPECTROSCOPY - INELASTIC PEAK SHAPE-ANALYSIS [J].
SCHLEBERGER, M ;
FUJITA, D ;
SCHARFSCHWERDT, C ;
TOUGAARD, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (03) :949-953
[9]   Ge growth on Si(001) studied by x-ray photoelectron spectroscopy peak shape analysis and atomic force microscopy [J].
Schleberger, M ;
Simonsen, AC ;
Tougaard, S ;
Hansen, JL ;
Larsen, AN .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (06) :3032-3035
[10]   GROWTH AND IN-DEPTH DISTRIBUTION OF THIN METAL-FILMS ON SILICON(111) STUDIED BY XPS - INELASTIC PEAK SHAPE-ANALYSIS [J].
SCHLEBERGER, M ;
FUJITA, D ;
SCHARFSCHWERDT, C ;
TOUGAARD, S .
SURFACE SCIENCE, 1995, 331 :942-947