NANOSTRUCTURE OF THIN METAL-FILMS ON SILICON(111) INVESTIGATED BY X-RAY PHOTOELECTRON-SPECTROSCOPY - INELASTIC PEAK SHAPE-ANALYSIS

被引:33
作者
SCHLEBERGER, M
FUJITA, D
SCHARFSCHWERDT, C
TOUGAARD, S
机构
[1] Odense Universitet, Odense
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 03期
关键词
D O I
10.1116/1.588211
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have investigated by x-ray photoelectron spectroscopy (XPS) the nanostructure of thin metal films on Si(111) at room temperature and during annealing. We studied the growth and in-depth distribution of Cu, Ag, Pt, and Au. These aspects are very difficult to determine by conventional surface analysis. Hence, we applied the Tougaard method for quantitative analysis of surface nanostructures by XPS. At room temperature we find island formation for Cu, Pt, and Au. For Ag, the analysis indicates either island formation or a Stranski-Krastanov growth mode. For temperatures ≈ 120 °C we find for Cu and Au strong diffusion deep into the bulk silicon, whereas for Ag and Pt, we find that the metal atoms agglomerate, i.e., the islands grow higher, while the coverage decreases. At higher annealing temperatures there are strong variations in the redistribution of the metal atoms for the different systems, but some silicon remains at the surfaces of all four systems.
引用
收藏
页码:949 / 953
页数:5
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