HYDROGEN-MEDIATED EPITAXY OF AG ON SI(111) AS STUDIED BY LOW-ENERGY ION-SCATTERING

被引：140

作者：

SUMITOMO, K

KOBAYASHI, T

SHOJI, F

OURA, K

KATAYAMA, I

机构：

[1] OSAKA UNIV,FAC ENGN,DEPT ELECTR ENGN,SUITA,OSAKA 565,JAPAN

[2] OSAKA INST TECHNOL,FAC GEN EDUC,DEPT APPL PHYS,ASAHI KU,OSAKA 535,JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.66.1193

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated the effect of the saturation of surface dangling bonds of Si(111) surfaces with atomic hydrogen upon Ag thin-film growth. By using time-of-flight-type low-energy ion-scattering-recoil analysis techniques, we find that the growth mode of Ag thin films is drastically changed by the hydrogen termination of Si(111)-7 x 7 surfaces and that the epitaxial growth of A-type Ag(111) films is promoted by the hydrogen atoms residing at the film/substrate interface.

引用

页码：1193 / 1196

页数：4

共 25 条

[1] QUANTITATIVE SURFACE ATOMIC GEOMETRY AND TWO-DIMENSIONAL SURFACE ELECTRON-DISTRIBUTION ANALYSIS BY A NEW TECHNIQUE IN LOW-ENERGY ION-SCATTERING
AONO, M
OSHIMA, C
ZAIMA, S
OTANI, S
ISHIZAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L829 - L832
[2] LOW-ENERGY ION-SCATTERING FROM THE SI(001) SURFACE
AONO, M
HOU, Y
OSHIMA, C
ISHIZAWA, Y
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (08) : 567 - 570
[3] AONO M, 1988, NUCL INSTRUM METH B, V33, P857
[4] Bauer E., 1958, Z KRISTALLOGR, V110, P372, DOI DOI 10.1524/ZKRI.1958.110.1-6.372
[5] SCATTERING OF LOW-ENERGY NE+ IONS ON NI(001) AND NI(001) AU (SEGREGATED) SURFACES
BUCK, TM
STENSGAARD, I
WHEATLEY, GH
MARCHUT, L
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 170 (1-3): : 519 - 525
[6] SURFACTANTS IN EPITAXIAL-GROWTH
COPEL, M
REUTER, MC
KAXIRAS, E
TROMP, RM
[J]. PHYSICAL REVIEW LETTERS, 1989, 63 (06) : 632 - 635
[7] COUPLING OF AN ADSORBATE VIBRATION TO A SUBSTRATE SURFACE PHONON - H ON SI(111)
DUMAS, P
CHABAL, YJ
HIGASHI, GS
[J]. PHYSICAL REVIEW LETTERS, 1990, 65 (09) : 1124 - 1127
[8] TIME-OF-FLIGHT SCATTERING AND RECOILING SPECTROMETRY .1. STRUCTURE OF THE W(211) SURFACE
GRIZZI, O
SHI, M
BU, H
RABALAIS, JW
HOCHMANN, P
[J]. PHYSICAL REVIEW B, 1989, 40 (15): : 10127 - 10146
[9] SURFACE-STRUCTURE ANALYSIS OF AU OVERLAYERS ON SI BY IMPACT-COLLISION ION-SCATTERING SPECTROSCOPY - SQUARE-ROOT-3X SQUARE-ROOT-3 AND 6X6 SI(111)/AU
HUANG, JH
WILLIAMS, RS
[J]. PHYSICAL REVIEW B, 1988, 38 (06): : 4022 - 4032
[10] Koma A., 1984, Microelectronic Engineering, V2, P129, DOI 10.1016/0167-9317(84)90057-1

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