A 6,13-bis(Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric

被引：35

作者：

Kwon, Jae-Hong ^{[1
]}

Seo, Jung-Hoon ^{[1
]}

Shin, Sang-Il ^{[1
]}

Kim, Kyung-Hwan ^{[2
]}

Choi, Dong Hoon ^{[2
]}

Kang, In Byeong ^{[3
]}

Kang, Hochul ^{[3
]}

Ju, Byeong-Kwon ^{[1
]}

机构：

[1] Korea Univ, Coll Engn, Display Nanosyst Lab, Seoul 136701, South Korea

[2] Korea Univ, Dept Chem, Seoul 136701, South Korea

[3] LG Philips LCD R&D Ctr, Kyonggi Do 431080, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene); organic electronics; organic thin-film transistor (OTFT); spin-on glass;

D O I：

10.1109/TED.2007.913007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current ON/OFF ratio, and subthreshold swing, which were 6.48 x 10(-3) cm(2)/V.s, -13 V, similar to 100, and 1.83 V/dec, respectively.

引用

页码：500 / 505

页数：6