Domain switching kinetics in disordered ferroelectric thin films

被引:270
作者
Jo, J. Y. [1 ]
Han, H. S. [1 ]
Yoon, J. -G. [2 ]
Song, T. K. [3 ]
Kim, S. -H. [4 ]
Noh, T. W. [1 ]
机构
[1] Seoul Natl Univ, Dept Phys & Astron, ReCOE&FPRD, Seoul 151747, South Korea
[2] Univ Suwon, Dept Phys, Suwon 445743, Gyeonggi Do, South Korea
[3] Changwon Natl Univ, Sch Nano Adv Mat, Chang Won 641773, Gyeongnam, South Korea
[4] Inostek Inc, R&D Ctr, Ansan 426901, Gyeonggi Do, South Korea
关键词
D O I
10.1103/PhysRevLett.99.267602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigated domain kinetics by measuring the polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr,Ti)O-3 films, which are widely used in ferroelectric memories. Their switching behaviors at various electric fields and temperatures could be explained by assuming the Lorentzian distribution of logarithmic domain-switching times. We suggested that the local field variation due to dipole defects at domain pinning sites could explain the Lorentzian distribution.
引用
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页数:4
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