Diffusion of Sb in strained and relaxed Si and SiGe

被引：97

作者：

Kringhoj, P

Larsen, AN

Shirayev, SY

机构：

[1] Institute of Physics and Astronomy, University of Aarhus, Aarhus

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.76.3372

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of strain on the vacancy-mediated diffusion of Sb has been investigated by comparing the diffusivities in tensile-strained and relaxed Si and in compressively strained and relaxed Si0.91Ge0.09. The diffusivity is enhanced by compressive strain and retarded by tensile strain. These experimental observations are in agreement with theoretical predictions by Antonelli and Bernholc

引用

页码：3372 / 3375

页数：4