Magnetic properties of wide gap layered semiconductor (La1-xMxo) Cu1-yTyS (M = Ca, Ce; T = Mn, Co, Zn)

被引：6

作者：

Takase, K. ^{[1
]}

Shoji, O. ^{[1
]}

Shimizu, T. ^{[1
]}

Takahashi, Y. ^{[1
]}

Takano, Y. ^{[1
]}

Sekizawa, K. ^{[1
]}

机构：

[1] Nihon Univ, Coll Sci & Technol, Chiyoda Ku, Tokyo 1018308, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷

关键词：

oxysulfide; (LaO)CuS; wide gap semiconductor; magnetic semiconductor;

D O I：

10.1016/j.jmmm.2003.12.798

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated on carrier and magnetic moment injections into a wide gap layered semiconductor (LaO) CuS with alternating LaO and CuS layers. By the substitution of 3d transition metal or Zn ions for Cu sites and of rare earth metal or Ca ions for La sites, electrical and magnetic properties of the compound can be changed. For the Ca or Ce substitution, the decrease of the electrical resistivity is shown accompanied by the small localized magnetic moments for the latter. The localized magnetic moments and the electrical resistivity enhancement due to compensation of the existing acceptor levels are observed for the simultaneous substitution of Ca and Co and that of Ca and Mn. (C) 2004 Elsevier B. V. All rights reserved.

引用

页码：E1535 / E1536

页数：2

共 4 条

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