Terahertz radiation from semiconductor surfaces

被引：48

作者：

Gu, P ^{[1
]}

Tani, M ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol, Nishi Ku, Kobe, Hyogo 6512492, Japan

来源：

TERAHERTZ OPTOELECTRONICS | 2005年 / 97卷

关键词：

D O I：

10.1007/10828028_3

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this chapter, terahertz radiation from semiconductor surfaces by excitation of femtosecond laser pulses is discussed with special attention, paid to the influence of lattice vibrations and plasma oscillations in semiconductors. The effect of dielectric dispersion near the optical-phonon resonance, the coupling of the THz electrical transient with longitudinal optical phonons and semiconductor plasmons is considered.

引用

页码：63 / 97

页数：35

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