Influence of the surface termination on the electrochemical properties of boron-doped diamond (BDD) interfaces

被引：58

作者：

Actis, Paolo ^{[3
]}

Denoyelle, Alain ^{[3
]}

Boukherroub, Rabah ^{[1
,2
]}

Szunerits, Sabine ^{[1
,2
,3
]}

机构：

[1] CNRS, IRI, USR 3078, F-59652 Villeneuve Dascq, France

[2] CNRS, IEMN, UMR 8520, F-59652 Villeneuve Dascq, France

[3] Univ Grenoble 1, INPG, CNRS, LEPMI, F-38402 St Martin Dheres, France

来源：

ELECTROCHEMISTRY COMMUNICATIONS | 2008年 / 10卷 / 03期

关键词：

boron-doped diamond electrode; charge transfer kinetics; Mott-Schottky; flat band potential; surface termination;

D O I：

10.1016/j.elecom.2007.12.032

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The paper reports on the electrochemical study of heavily boron-doped diamond (BDD) in aqueous media. Cyclic voltammetry and Mott-Schottky analysis were used to evaluate the influence of the surface termination on the electrochemical properties of BDD electrodes. The behavior of aminated BDD (NH2-BDD) interfaces, prepared from hydrogen-terminated BDD using NH3 plasma and from photochemically oxidized BDD (HO-BDD) using 3-aminopropyltrimethoxysilane (APTMES), are investigated and compared to those of H-BDD and HO-BDD. While H-BDD and HO-BDD electrodes show classical semiconductor behavior, amine-terminated BDD interfaces exhibit metallic behavior at pH < 10 and a semiconductor behavior at more basic pH. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：402 / 406

页数：5

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