Sharp photoluminescence of CdS nanocrystals in Al2O3 matrices formed by sequential ion implantation

被引：21

作者：

Ando, M

Kanemitsu, Y ^{[1
]}

Kushida, T

Matsuda, K

Saiki, T

White, CW

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan

[2] Kanagawa Acad Sci & Technol, Kawasaki, Kanagawa 2130012, Japan

[3] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA

[4] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 04期

关键词：

D O I：

10.1063/1.1387259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on photoluminescence (PL) experiments in CdS nanocrystals fabricated by sequential ion implantation in Al2O3 matrices. The PL spectrum and the spatial image of the PL intensity have been studied at 8 K using a scanning near-field optical microscope. The PL spectrum at each bright spot has been found to consist of narrow lines of various energies, although the spectrum measured by conventional optics shows a single and broad band locating below the free-exciton absorption energy. The origin of the sharp PL lines in CdS nanocrystals will be discussed. (C) 2001 American Institute of Physics.

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页码：539 / 541

页数：3

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