Sub-1V bootstrapped CMOS driver for giga-scale-integration era

被引：15

作者：

Law, CF ^{[1
]}

Yeo, KS ^{[1
]}

Rofail, SS ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Div Circuits & Syst, Singapore 639798, Singapore

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 05期

关键词：

D O I：

10.1049/el:19990248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A logic circuit designed for the 0.5-1V supply regime, based on a 0.25 mu m double-well CMOS technology is described. Using circuit techniques that lead to short turn-on time for the output driving devices, efficient bootstrapping and high-speed full-swing operation have been achieved. Comparative evaluations between the proposed circuit against a double-stage CMOS driver and a reported 1.5V bootstrapped CMOS circuit have indicated its competitiveness in very-low-voltage environments.

引用

页码：392 / 394

页数：3